FORM NOAPPLY TIMEEFFECTIVE TIMESTATUSSUBJECTVIEW
PDP-20211105-00022021-11-05 09:38:122021-11-24 09:55:08TerminationBCD-890-AA comparison between conventional Al interconnect and Cu-dual damascene
PDP-20211105-00012021-11-05 08:00:47 SigningYZA-567-AA the effect of native oxide on thin gate oxide integrity
PDP-20211104-00012021-11-04 13:08:56 SigningVWX-234-AC new process development and process integration of LCDD devices
PDP-20211103-00022021-11-03 16:33:09 SigningSTU-901-AA photo coater and development cycletime enhancements for hight power product
PDP-20211103-00012021-11-03 13:06:30 SigningGHI-789 process Metal GATE enhancement for high voltage break down requirement
PDP-20211102-00022021-11-02 11:07:032021-11-26 08:45:22EffectivePQR-678-AA CMP speed and time improve prevention over polishing miss operation
PDP-20211102-00012021-11-02 10:45:04 SigningDEF-456 process enhancement for custome mobile product requirement
PDP-20211101-00032021-11-01 14:56:052021-11-23 15:31:07TerminationMNO-345-AB flatness enhancements for film thickness measurement improve
PDP-20211101-00022021-11-01 11:57:212021-11-16 09:04:32EffectiveJKL-012-AA oxidation layer enhancements for PCVD recipe update
PDP-20211101-00012021-11-01 09:34:022021-11-18 14:14:43EffectiveABC-123-AB new process evaluate for ion implantation mis-operation recipe enhancement